Job Title

Location: Bangalore, India Design of High Voltage Power MOSFETs and diodes in SiC and GaN TechnologiesDefine device design and process platform specifics to meet design targetsPerform TCAD process and device simulations, layout designDesign rules definition and maintenance through generation of device designsElectrical characterization of prototypes, data analysis, and design debugImproving existing products and participate in next generation product portfolio discussionsNovel device designs, Generate new Intellectual PropertyRequirementsMS/PhD in Microelectronics, Solid State Physics or Electrical Engineering5-8 years of experience in power MOSFET and IGBT design and/or fabricationHands-on experience in power device technology and process developmentProficiency in TCAD modelling and simulation tools (Synopsys or Silvaco Design Environment preferred), Layout design environment (e.g. Cadence, K-Layout, L-Edit)Develop physically productive simulation decks for a given power technologyUnderstanding of substrate material and epitaxial growth, strong knowledge in power MOSFET device physics, fabrication and characterization principlesKnowledge and experience in design for reliability and robustness, RBSOA (Reverse Bias Safe Operating Area) and SCSOA (Short Circuit Safe Operating Area)Familiarity of Qualification and Reliability Standards such as JEDEC and AEC-Q101Anticipate, analyze, and implement systematic problem-solving techniques for device design related issues